Semiconductor device

ABSTRACT

A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section  1003   a , a ground wiring section  1003   b  and a signal wiring section  1003   c  are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.

BACKGROUND OF THE INVENTION

1. The present invention relates to a semiconductor device which isstructured to connect pads with bumps for outside connection by wiringsections in a semiconductor element and more particularly to thesemiconductor device which may reduce the operating noise even if itsclock frequency is several hundred MHz or more.

2. In recent days, semiconductor devices have been more and morerequested to enhance its density, integration and speed and lower itscost. In order to meet with the request, for example, as disclosed inJP-A-8-250498, a semiconductor device has been designed so that wiringsections and bumps are formed on a pad forming surface of asemiconductor element and those wiring sections and bumps are conductivewith the pads. As shown in FIG. 17, in such a technology, a pad formingsurface of a semiconductor element is formed to have a plurality ofpads, and a plurality of wiring sections are formed on the pad formingsurface so that those wiring sections may make a continuity with one ofthose pads. The bumps are formed at predetermined positions in thewiring sections so that those bumps may be formed at any intervalwithout being limited by the positions and the intervals of the padsmerely by prescribing those predetermined positions. The outer dimensionof the semiconductor device is, therefore, the substantially same as thedimension of the chip on which the semiconductor element is mounted, sothat the semiconductor device may be manufactured in higher density andintegration and lower cost.

3. In order to reduce the power noise of an LSI chip and make theoperation faster, for example, as disclosed in JP-A-6-163822, a planarpower wiring pattern is formed on the substantially overall surface ofthe chip except signal electrode pads. This technology as shown in FIG.18 provides a capability of directly supplying an electric power fromthe planar power surface to a circuit element located under the planarpower surface, which leads to reducing the inductance and the powernoise of the LSI chip, thereby making the operation of the semiconductordevice faster.

4. As described above, the conventional semiconductor devices may becomposed in higher density and integration and lower cost by forming thepads, the bumps and the wiring sections on the pad forming surface ofthe semiconductor element. However, those semiconductor devices stillhave a problem in speed.

5. For example, if a semiconductor device provided with a supply voltageof 3.3 V is operated at a clock frequency of 200 MHz, roughly speaking,it is necessary to switch a signal voltage from a high state (supplyvoltage) to a low state (ground voltage) merely for a time of 500 pscorresponding to 10% of a clock period 5 ns. Assuming that the loadcapacitance at this time is about 10 pF, the charges to be charged inthis capacitance may be calculated as 10 pF×3.3 V=33 pC. The currentflowing in the switching is represented by differentiating the chargesin time, that is, 33 pC/500 ps=0.066 A. It is known that this kind oftransient current flow in switching a signal may give rise to a noisevoltage by the inductance of the wiring system and thereby serves tomalfunction the semiconductor device, for example, as described in E. E.Davidson et al., IBM J. Res. Dev. May 1982, vol. 26. This noise voltagemay be represented by a time-base change rate of the inductance and thetransient current. For example, assuming that the inductance of one leadof the semiconductor device is 10 nH, a noise voltage of about 1.3 V perlead is generated. This noise voltage may be derived by 10 nH×0.066A/500 ps. If this kind of noise appears in the power supply, the groundor the signal line, the actual high or low state is erroneously read.This may lead to malfunction. As mentioned above, this noise is roughlyin proportion to the operating speed, that is, the operating frequency.Hence, in order to reduce the operating frequency, the operation speedcannot be made faster. Hence, for making the operation speed faster, itis necessary to reduce another parameter for determining the noise, thatis, the inductance of the wiring system provided in the semiconductordevice.

6. The foregoing semiconductor device disclosed in JP-A-8-250498 mayprovide a smaller semiconductor device than the conventional surfacemounting type semiconductor device by forming the pads, the bumps andthe wiring sections on the pad forming surface. It means that theinductance of the wiring system is reduced as compared with theconventional surface mounting type semiconductor device. However,considering that a conductor having a length of several millimeterscontains roughly several nH inductance, the foregoing semiconductor doesnot provide so low an inductance as meeting the request by the recentvarious systems that need to operate at a quite fast speed.

7. Further, the semiconductor device disclosed in JP-A-6-163822considers reduction of the inductance on the power wiring side. However,it does not consider reduction of the inductance on the ground wiringside. Hence, the semiconductor device has no means of reducing the noisecaused on the ground wiring side. Further, the pads are scattered on thechip surface and when this chip is mounted on the mounting substrate bybumps or the like, those bumps are scattered as well. It means that theplanar conductive layer cannot be easily formed.

SUMMARY OF THE INVENTION

8. In consideration of the foregoing problem, it is an object of thepresent invention to provide a semiconductor device which contains alower inductance of the wiring system for the purpose of meeting withthe requests of high density and integration, low cost and the likewithout making the manufacturing process complicated as well as makingthe semiconductor device operate at a faster clock frequency thanseveral hundreds MHz as keeping its noise low. Further, the presentinvention provides a capability of reducing the noises generated on thepower wiring side as well as the ground wiring side. Moreover, theinvention also provides the solving method for a general structurehaving difficulty in reducing the inductance on the wiring systembecause of the pads and bumps located on the chip surface.

9. In carrying out the foregoing object, the semiconductor deviceaccording to the invention of the present application is characterizedby including the following structures:

10. (1) In a semiconductor device including a semiconductor elementhaving power pads for supplying a power potential, ground pads forsupplying a ground potential, signal pads for inputting and outputting asignal, all of which are formed on one main surface thereof; power bumpsfor outside connection being connected with the power pads by powerwiring sections; ground bumps for outside connection being connectedwith the ground pads by the ground wiring sections; and signal pads foroutside connection being connected with the signal pads by signal wiringsections, the power wiring section or the ground wiring section islocated adjacently on both sides of the signal wiring sections.

11. (2) In a semiconductor device having a plurality of pads, aplurality of bumps, and a plurality of wiring sections for connectingthe pads with the bumps, all of which are formed on one main surface ofthe semiconductor element, the plurality of pads include power pads,ground pads and signal pads, the plurality of wiring sections includepower bumps, ground bumps and signal bumps, the plurality of wiringsections include power wiring sections, ground wiring sections andsignal wiring sections, and the power wiring section or the groundwiring section is formed adjacently on both sides of at least one partof the signal wiring section.

12. (3) In (1) or (2), the ground wiring sections and the signal wiringsections are both located on one main surface of the semiconductorelement through several n-type layer.

13. (4) In (1) or (2), the power wiring sections and the ground wiringsections and the signal wiring sections are located on one main surfaceof the semiconductor element through several n-type layers.

14. (5) In either one of (1) to (4), each width of the power wiringsection and the ground wiring section is wider than the width of thesignal wiring section.

15. (6) In (5), the power wiring section or the ground wiring section islocated in a manner to cover an outer peripheral area of one mainsurface of the semiconductor element.

16. (7) In a semiconductor device including a semiconductor elementhaving power pads for supplying a power potential; ground pads forsupplying a ground potential; and signal pads for inputting andoutputting a signal, all of which are formed on one main surfacethereof, power bumps for outside connection being connected with thepower pads by power wiring sections, ground bumps for outside connectionbeing connected with the ground pads by ground wiring sections, andsignal bumps for outside connection being connected with the signal padsby the signal wiring sections, each width of the power wiring sectionand the ground wiring section is wider than the width of the signalwiring section, and the power wiring section or the ground wiringsection is located in a manner to cover an outer peripheral area of onemain surface of the semiconductor element.

17. (8) In a semiconductor device including a semiconductor elementhaving power pads for supplying a power potential; ground pads forsupplying a ground potential and signal pads for inputting andoutputting a signal, all of which are formed on one main surfacethereof; power bumps for outside connection being connected with thepower pads by power wiring sections; ground bumps for outside connectionbeing connected with the ground pads by ground wiring sections; andsignal bumps for outside connection being connected with the signal padsby signal wiring sections, a central portion of one main surface of thesemiconductor element includes a pad sequence having a repetition of acombination of one power pad, one ground pad and one signal pad locatedalong one side of an outer edge portion of the semiconductor element,the one power pad being connected with at least two power bumps locatedon both sides of the pad sequence by means of the power wiring sections,the one ground pad being connected with at least two power bumps locatedon both sides of the pad sequence by the ground wiring sections, and theone signal pad being connected with the one signal pad located on eitherside of the pad sequence by the signal wiring sections.

18. (9) In a semiconductor device including a semiconductor elementhaving power pads for supplying a power potential, ground pads forsupplying a ground potential, and signal pads for inputting andoutputting a signal, all of which are formed on one main surfacethereof; power bumps for outside connection being connected with thepower pads by power wiring sections; ground bumps for outside connectionbeing connected with the ground pads by the ground wiring sections; andsignal bumps for outside connection being connected with the signal padsby the signal wiring sections; a central portion of the one main surfaceof the semiconductor element includes a pad sequence having a repetitionof a combination of one power pad, one ground pad and two or more signalpads located along one side of the outer edge of the semiconductorelement, the one power pad being connected with at least two power bumpslocated on both sides of the pad sequence by the power wiring sections,the one ground pad being connected with at least two ground bumpslocated on both sides of the pad sequence by the ground wiring sections,each of the two or more signal pads being connected with the signal padslocated on both sides of the pad sequence in a one-to-one manner by thesignal wiring sections, and the signal wiring sections being alternatelyextended on both sides of the pad sequence.

19. (10) In (8) or (9), the power wiring sections, the ground wiringsections and the signal wiring sections are located on the one mainsurface of the semiconductor element through several n-type layers, andeach width of the power wiring section and the ground wiring section iswider than the width of the signal wiring section.

20. (11) In (8) or (9), the signal pad is any combination of one or twoor more of data, clock, write-enable and data-mask.

BRIEF DESCRIPTION OF THE DRAWINGS

21.FIG. 1 is a plan view showing a wiring pattern of a semiconductordevice according to an embodiment of the present invention.

22.FIGS. 2A, 2B, 2C are sectional view showing a semiconductor deviceaccording to the embodiment of the present invention.

23.FIG. 3 is an equivalent circuit diagram showing a cause of noiseoccurrence.

24.FIG. 4 is an equivalent circuit diagram showing a cause of noiseoccurrence.

25.FIG. 5 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

26.FIG. 6 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

27.FIG. 7 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

28.FIG. 8 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

29.FIG. 9 is a perspective view showing a mounting state of thesemiconductor device and the chip capacitor.

30.FIG. 10 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

31.FIG. 11 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

32.FIG. 12 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

33.FIG. 13 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

34.FIG. 14 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

35.FIG. 15 is a sectional view showing a semiconductor device accordingto another embodiment of the present invention.

36.FIG. 16 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

37.FIG. 17 is a plan view showing a semiconductor device according to anprior art.

38.FIG. 18 is a plan view showing a semiconductor device according toanother prior art.

39.FIG. 19 is a plan view showing a wiring pattern of a semiconductordevice according to another embodiment of the present invention.

DESCRIPTIONS OF THE EMBODIMENTS

40. Hereafter, the embodiments of the present invention will bedescribed with reference to the appended drawings.

41.FIG. 1 is a plan view showing a pad forming surface of asemiconductor device according to a first embodiment of the presentinvention. A semiconductor device 1000 is made up of a semiconductorelement 1100 composed of a roughly rectangular silicon chip having sidesof several millimeters or several tens millimeters as shown in thesection of FIGS. 2A, 2B, 2C, a plurality of pads 1001, a bump formingsection 1004, a plurality of bumps 1002, a plurality of wiring sections1003 for connecting them formed on a pad forming surface 2000 of thesemiconductor element 1100. The pads 1001 are further divided into powerpads 1001 a, ground pads 1001 b and signal pads 1001 c. The power bumps1002 a are further divided into ground bumps 1002 b and signal bumps1002 c. The power wiring sections 1003 a are further divided into groundwiring sections 1003 b and signal wiring sections 1003 c. In this andthe other drawings, in order to distinct the power, the ground and thesignal bumps, pads and wiring sections from each other, the power andthe ground bumps, pads and wiring sections may be hatched. In thisembodiment, about the signal wiring sections 1003 c other than the powerwiring sections 1003 a and the ground wiring sections 1003 b, the groundwiring sections 1003 b are located adjacently on both sides of at leastone part of the signal wiring section located in the left hand of thesemiconductor device and the power wiring sections 1003 a are locatedadjacently on both of at least one part of the signal wiring sectionlocated in the right hand of the semiconductor device. The wiringsection is generally as wide as 10 μm to 100 μm.

42. The sectional structure of the semiconductor device is schematicallyshown in FIGS. 2A, 2B and 2C. As shown, on the semiconductor element1100 are laminated a silicon oxide layer 1101 or silicon nitride layer1102 for protecting the element, a first dielectric layer 1103 forinsulating the signal wiring section 1003 c from the semiconductorelement, the signal wiring section 1003 c for electrically connectingthe semiconductor element 1100 with a mounting substrate having thesemiconductor device 1000 mounted thereon through the signal pad 1001 cand the signal bump 1002 c, a second dielectric layer 1104 forprotecting the power wiring section 1003 c not shown in FIGS. 2A, 2B and2C, the wiring section 1003, the pad 10001 and the semiconductor element1100 and insulating the mounting substrate, and a bump forming section1104 served as a platform on which the bump 1102 is to be formed. Thesignal wiring section 1003 c, the power wiring section 1003 a and theground wiring section 1003 b are formed in the same process. Hence, themanufacturing process of those sections are not complicated. The siliconnitride layer 1102 is as wide as about 1 to 2 μm. More preferably, thelayer 1102 should be formed to have a thickness of about 1.3 μm by meansof the plasma process. The first dielectric layer is formed of anorganic insulator such as silicon nitride or sensitive PIQ. The firstdielectric layer is as thick as 3 to 7 μm, preferably, about 5 μm. Thesecond insulating layer is formed of an organic insulator such assensitive PIQ and is as wide as 3 to 7 μm, preferably, about 5 μm. Thepad 1001 is mainly formed of aluminum and is as thick as 0.6 to 1 μm.The wiring section 1003 is formed of a laminated structure of a chromiumlayer of 0.1 μm, a copper layer of 3 μm, and a chromium layer of 0.05 μmranging from a closer side of the semiconductor element or mainly formedof aluminum and ranges from 0.8 to 1 μm in thickness. The bump formingsection 1004 is preferably formed of a chromium layer of 0.05 μm, analloy of nickel and tungsten of 2 μm, and a gold layer of 0.05 μmranging in this sequence from a closer side to the semiconductorelement. The bump 1002 is formed of solder. Though not shown, asdisclosed in JP-A-9-260389, about the bump forming section 1004, it isapparent that the gold on the uppermost surface is not covered but maybe formed as a circle on a contact portion between the bump 1002 and thebump forming section 1004. In the structure shown in FIG. 2C, the wiringsection layer is a lamination mainly formed of aluminum and a protectivelayer is formed of silicon oxide layer. In this embodiment, the siliconoxide layer is served as the silicon nitride layer 1102 and the firstdielectric layer 1103 as shown in FIGS. 2A and 2B. In this case, it ispreferable that the silicon oxide layer 1101 is as wide as about 0.1 to1 μm. More preferably, it should be formed to have a thickness of about0.3 μm by means of the plasma process. In this embodiment, thedielectric layer overlapped on the wiring section is composed of asecond dielectric layer formed of sensitive PIQ and the silicon nitridelayer 1105.

43. As shown in FIGS. 2A, 2B and 2C, according to the invention, thepower wiring sections or the ground wiring sections and the signalwiring sections other than the power or the ground wiring sections areformed on the same plane.

44. Next, the description will be oriented to how the invention of thepresent application makes the fast operation possible, which is anobject of the semiconductor device according to this embodiment.

45.FIG. 3 shows an equivalent circuit for a circuit around an outputbuffer included in the semiconductor device. In particular, consider thetransition of the potential of a data pin 2 from the low state (groundpotential) to the high state (power potential). At the transition, ofthe transistors composing a final stage 4 of an output buffer, the powerside transistor is made conductive, so that current 100 flows from apower pin 1 to the data pin through the final stage of the outputbuffer. This current is charged in the load connected to the data pin 2so that the potential of the data pin 2 is switched from the low stateto the high state. At a time, current 101 flows from the power spin 1 toa ground pin 3 through the final stage of the output buffer. In general,this current is called passage current, which is not preferable to thesemiconductor device. However, it is understood that when the buffer isswitched, the current has to flow from the power source to the ground ina narrow time range when the transistor composing the buffer is madesubstantially conductive. When the state of the data pin 2 is transitedfrom the low to the high state, unlike the flow of the current 100 shownin FIG. 3, the current 100 flows from the data pin 2 to the ground pin3. The current 101 flow from the power pin 1 to the ground pin 3 likethe flow of the current 101 shown in FIG. 3.

46. As described above, at the potential transition of the data pin ofthe signal pins included in the semiconductor device, for example, asshown in FIG. 3, the transient current starts to flow. Importantly, theflow of the transient current causes the noise voltage to be generatedin proportion to a time-base change rate of an inductance and thetransient current of each pin ranged along the current passage. Hence,with increase of the operating speed, that is, the operating frequency,the noise is increased. As a result, there exists an upper-limitfrequency to be operated at a certain inductance value. In order toenhance the upper limit, it is necessary to reduce the inductance asmuch as possible. For example, the foregoing conventional semiconductordevice has a relatively smaller dimension, which means that it has asmaller inductance than the semiconductor device provided with a leadframe. The present invention provides the semiconductor device which hasthe roughly same dimension as but a smaller inductance than theconventional semiconductor device. In order to understand this, thereaders are required to know that the inductance for giving influence onthe transient current 100 shown in FIG. 3 is an effective inductancederived by the inductance 12 of the data pin 2, the inductance 11 of thepower pin 1, and a mutual inductance M of the power pin 1 and the datapin 2. For example, assuming that the inductance of the power pin is L1,the inductance of the data pin is L2, and the mutual inductancetherebetween is M, the effective inductance about the passage of thetransient current 100 shown in FIG. 3 is generally represented asL1+L2−2×M. Since the noise is in proportion to the inductance of thecurrent passage, that is, the effective inductance, in the conditionthat no change takes place in the inductance L2 of the data pin and theinductance L1 of the power pin, by increasing the mutual inductance Mbetween them, it is possible to reduce the overall effective inductance.It is obvious that the same discussion may hold true to the passagecurrent 101 shown in FIG. 3. In this case, by increasing the mutualinductance between the power pin 1 and the grand pin 3, it is possibleto reduce the overall effective inductance.

47.FIG. 4 shows an equivalent circuit corresponding to an address pin 6and a circuit around the input buffer included in the semiconductordevice. Herein, in particular, consider that the potential of theaddress pin 6 is switched from the low state (ground potential) to thehigh state (power potential). In this case, when the transition takesplace, the transient current 102 starts to flow from the address pin 6to the power pin 1 and the ground pin 3 through the input buffer 5 andthe passage current 103 starts to flow from the power pin 1 to theground pin 3. The former current is charged in an input capacitance,while the latter current is transient current appearing when the bufferis switched as described above. Even in the input pins such as theaddress pin of the signal pins, like the data pin, the transient currenttakes place when the signal is switched and the noise is generated bythe inductance of the conductor ranged along the transient current andthe current passage. Hence, the method for reducing the noise describedwith reference to the data pin may be used for these input pins.

48. In order to reduce the effective inductance, the common printedboard is composed of multi-layered substrate in which the ground or thepower source is formed of a filmy conductor under the signal lines.However, the semiconductor device provided by the present invention hasdifficulty in adopting such a multi-layered structure because the costis restricted. Hence, the semiconductor device of this invention adoptsa mono-layered structure as a wiring section layer containing the powersource and the ground. Hence, for example, by taking the composition asshown in FIG. 1, it is possible to reduce the distance between the powersource or the ground wiring section and the signal wiring section. Itleads to reducing the effective inductance of the system of combiningthe power source or the ground wiring section with the signal wiringsection.

49. In the embodiment shown in FIG. 1, for reducing the effectiveinductance of the signal wiring section 1003 c and the power wiringsection 1003 a or the signal wiring section 1003 c and the ground wiringsection 1003 b, the power wiring section 1003 a and the ground wiringsection 1003 b are located around the signal wiring section 1003 c in ameshed manner. Importantly, the conductor located around the signalwiring section is made to be an electric passage for connecting thepower source and the ground located in the output buffer 4 and the inputbuffer 5 included in the semiconductor element as shown in FIGS. 3 and 4with the power source and the ground of the mounting substrate on whichthe semiconductor device is mounted. Hence, about the power wiringsection 1003 a, the conductor around the signal wiring section 1003 cshown in FIG. 3 is required to be connected to the power pad 1001 a andthe power bump 1002 a, while about the ground wiring section 1003 b, theconductor is required to be connected to the ground pad 1001 b and theground bump 1002 b.

50.FIG. 5 is a plan view showing a semiconductor device according toanother embodiment of the present invention. In this embodiment, thepower wiring section 1003 a, the power pad 1001 a and the power bump1002 a are located adjacently on one side of at least one part of thesignal wiring sections other than the power and the ground wiringsections, while the ground wiring section 1003 b, the ground pad 1001 band the ground bump 1002 b are located adjacently on the other sidethereof. This type of locations results in increasing the number of thepads, the wiring sections and the bumps as compared with this embodimentshown in FIG. 1 but locating all the signal lines between the power andthe ground wiring sections. Hence, the transient current generated inthe power and the ground wiring sections when the potential of thesignal line 1003 c is transited is flown through the power wiringsection 1003 a or the ground wiring section 1003 b adjacent to thesignal lines. As a result, the effective inductance of these currentpassages can be made sufficiently smaller. Further, the use of this kindof structure makes it possible to reduce the effective inductance alongthe passage of the transient current generated in both the power pin andthe ground pin when the potential of the address pin shown in FIG. 4 istransited as compared with the effective inductance generated in thestructure that only one of the power and the ground wiring sections isadjacent to the signal lines.

51.FIG. 6 is a plan view showing the embodiment structured to suppressthe increase of the pads, the bumps and the wiring sections in number,which is likely to take place in the embodiment shown in FIG. 5. Byforming one of the power wiring section 1003 a and the ground wiringsection 1003 b adjacent to one side of at least one part of all thesignal wiring sections 1003 c, the total number of pins is madeadvantageously smaller though the effective inductance of the passagethrough which the transient current flows is somewhat larger as comparedwith the embodiment shown in FIG. 5. In actual, the composition of thisembodiment has a smaller number of pins than that of the embodimentshown in FIG. 5 though it has the same number of signal pins.

52. The above-mentioned embodiments have been described on theassumption that the power wiring section 1003 a and the ground wiringsection 1003 b have the same wiring section width as the signal line.However, like the foregoing embodiments of the present invention asshown in FIGS. 7 and 8, by keeping the width of the power or the groundwiring section larger than the width of the signal line and connectingthe power wiring section with the ground wiring section though thosewiring sections are located independently in the embodiments shown inFIGS. 5 and 6, the effective inductance of the power and the groundwiring sections may be further reduced. Further, the embodiments shownin FIGS. 7 and 8 are also advantageous in screening light from thesemiconductor element. In general, it is known that the semiconductorelement mainly formed of silicon may malfunction because of the exposureto the infrared light. In this embodiment, by covering an active portionand a peripheral portion of the semiconductor element that is likely tobe exposed by the infrared light with the power wiring sections and theground wiring sections, the malfunction rate may be reduced. Moreover,by screening alpha rays radiated from a member containing heavy metalsuch as solder with the power and the ground wiring sections locatedcloser to a solid layer of this embodiment, it is possible toadvantageously prevent malfunction of the semiconductor device caused bythe alpha rays.

53. Like the present embodiment, if the conductor closer to the solidlayer is provided on a pad forming surface of the semiconductor device1000, it is preferable to form it in a somewhat inner portion than theoutermost peripheral portion of the semiconductor device 1000 formed ofa silicon chip. In the formation of the semiconductor device of thisembodiment, the semiconductor element, the pads, the wiring sections andthe bumps are formed on a silicon wafer at a batch and then theresulting wafer is cut into chips along a scribed line. In thisformation, the cutting blade may be served to cut the metallic layersuch as the ground layer or the power layer of the semiconductor devicethough the blade should originally cut out the silicon chip. In thiscase, the blade may be often impaired and burr is caused on the metalliclayer when being cut out. The burr may leads to stripping. In order toavoid this, as described with respect to this embodiment, it ispreferable to locate an escape 1900 of the scribed line on the outmostperipheral portion of the semiconductor device and form the conductorlayer inside of the escape 1900.

54. In order to improve adherence of the conductor layer and increasethe reliability, when forming a large conductor layer, it is preferableto provide a hole 1901 for improving the adherence of the conductorlayer on the surface of the conductor layer. This hole serves to improveadherence as well as exhaust gas generated on the interface. The holeshould be small enough to keep the current smoothly flowing or elongatedalong the current so as not to prevent the current flowing between thepad and the bump.

55. The embodiment shown in FIG. 7 is composed so that the conductor iscloser to the solid layer by widening any one of the power wiringsection and the ground wiring section. In particular, in FIG. 7, theforegoing structure is applied to the ground wiring section. The presentstructure makes it possible to advantageously reduce the effectiveinductance of the ground wiring section, improve the lightproofness, andform a visor layer from the alpha rays. As shown in FIG. 8, moreadvantages may be provided by widening the ground wiring section and thepower wiring section for making the conductor closer to the solid layer.As has been described with reference to FIG. 3, depending on theswitching direction of the data, the transient current flows through thesignal wiring section, the power wiring section, the ground wiringsection, or both of the wiring sections. Hence, as shown in FIG. 8, bytreating the power wiring section and the ground wiring section equallyand widening the power and the ground wiring sections, the effectiveinductance along the passage of the transient current may be reducedindependently of the signal switching.

56. By making the power and the ground wiring sections tabular, coveringthe pad forming surface of the semiconductor device and locating thepower wiring section 1003 a closer to the ground wiring section 1003 blike the present embodiment, it is possible to advantageously compose apath capacitor with excellent high frequency. As shown in FIG. 9, thegeneral semiconductor device is composed to pull out the power wiringsection 102 and the ground wiring section 103 from the power pin and theground pin of the semiconductor device onto the mounting substrate 100and locate a small-sized chip capacitor on the substrate as a pathcapacitor for electrically connecting the chip capacitor with the wiringsections. Hence, the passage from the semiconductor device to the chipcapacitor is made longer, so that the effective inductance of thispassage is made relatively larger. As a result, though the chipcapacitor itself has an excellent frequency characteristic, the pathcapacitor may not often perform its role against the noises having afrequency of several tens MHz or more. According to the presentinvention, the path capacitor is composed of the power wiring section1003 a and the ground wiring section 1003 b themselves. It means thatthe effective inductance between the path capacitor and thesemiconductor device is remarkably small. Therefore, the path capacitorperforms its role against a roughly tenfold frequency of the ordinarychip capacitor as a limited frequency. It should be noted that the pathcapacitor composed by this embodiment has a capacitance of several pFand cannot be completely replaced with the chip capacitor generallyhaving a capacitance of 0.1 to several micro F. Even if, therefore, thesemiconductor device of this embodiment is used on the mountingsubstrate, the ordinary chip capacitor is used. However, the reductionof the noises is made possible in a wide frequency range by connectingthe path capacitor and the chip capacitor in parallel, the patchcapacitor being included in the semiconductor device of this embodimentand connected to the power and the ground of the semiconductor device ata small effective inductance and the chip capacitor having a largecapacitance but a slightly degraded high frequency characteristic.

57. Further, the present embodiment has a structure having lots of cutson the surface and the power and the ground wiring sections twistedtherewith unlike the other structure in which the power and the groundwiring sections are one large filmy table. This structure of the presentembodiment is served to reduce the internal stress caused in forming thewiring layer, thereby preventing the stripping of the conductive layercaused by the internal stress. In order to improve adherence andreliability of the conductive layer, when forming a large conductivelayer, it is preferable to form a hole 1901 for improving the adherenceof the conductive layer on the surface of the conductive layer. In thecase of forming the hole, it is preferable to make the size of the holesmall so that the flow of the current cannot be prevented by the hole orelongate the hole along the flow of the current. Further, this holeserves to vent the gas caused on the interface.

58. The embodiments shown in FIGS. 7 and 8 are composed for solving theproblems as to how the tabular power layer and the tabular ground layerare located if lots of pads and bumps are located on the surface of thechip, the solutions of which are not shown in the semiconductor devicedisclosed in JP-A-6-163822. Further, the embodiment shown in FIG. 8provides the structure of reducing the noises generated in both thepower wiring section and the ground wiring section, which structure isnot suggested in the semiconductor device disclosed in JP-A-6-163822.

59.FIG. 10 shows a semiconductor device according to another embodimentof the present invention. The semiconductor device is structured to haveone pad sequence on the center of the surface, which device is oftenused in the memory device included in the semiconductor device. In thisembodiment, one pad sequence located around the center of the surface iscomposed of a repetition of the power pad 1001 a, the ground pad 1001 band at least one signal pad 1001 c. The wiring sections from the powerpad 1001 a and the ground pad 1001 b are pulled out to the right and theleft side and then are connected to the corresponding power bump 1002 aand ground bump 1002 b at two points. This structure allows all thesignal wiring sections 1003 c to be located between the power wiringsection 1003 a and the ground wiring section 1003 b. As described withreference to the foregoing embodiment, even at any transit of thepotential of the signal line 1003 c, the transient current starts toflow through the power wiring section 1003 a or the ground wiringsection 1003 b adjacent to the signal line in which the potential istransited. Hence, the effective inductance of the passage of thetransient current may be reduced. This structure, therefore, may providethe semiconductor device that is operable at a fast speed and lownoises.

60. The structure shown in FIG. 11 is the embodiment shown in FIG. 10except that the power wiring section 1003 a and the ground wiringsection 1003 b are widened and the power bumps 1002 a and the groundbumps 1002 b are connected to each other if they may be connectable. Inthe connection, by reducing the number of the power bumps 1002 a and theground bumps 1002 b located on the outer peripheral portion, the signalwiring sections connected to the mounting substrate through the signalbumps 1002 c are likely to be pulled to the outside through the surfacewiring sections 1500 of the mounting substrate. Normally, the wiringsection of the mounting substrate is larger in wiring section width andwiring pitch than the wiring section located on the semiconductor devicelike this embodiment. If lots of power bumps and ground bumps arelocated on the outermost peripheral portion of the semiconductor device,it may be difficult to pull out the signal wiring sections between thebumps with the surface wiring sections of the mounting substrate. In thestructure of this embodiment, for pulling out the signal wiring sectionsfrom the semiconductor device onto the mounting substrate, the throughhole and the inner layer are not necessary, which leads to lowering thecost of the mounting substrate. Like this embodiment, even if the powerbumps 1002 a and the ground bumps 1002 b located on the outermostperipheral portion are reduced in number, since the power bump 1002 aand the ground bump 1002 b are connected with each other by the powerwiring section and the ground wiring section having a wider wiringwidth, the effective inductance along the passage of the transientcurrent is sufficiently small. Moreover, the outer peripheral portion ofthe semiconductor device to which the light containing the infraredlight is likely to enter is covered with the tabular power and powerwiring sections, thereby preventing the malfunction. Furthermore, sincethis embodiment is structured to widen the power wiring section 1003 aand the ground wiring section 1003 b, the resulting semiconductor devicehas an excellent dissipation. As shown in FIG. 11, since the bump 1002 dfor improving the dissipating performance may be located on the powerwiring section 1003 a or the ground wiring section 1003 b if necessary,the bump for heat release may be located on the bump-locating possibleportion corresponding to the expected heat release value. The bump forimproving the dissipating performance is more expected to improve thedissipating performance than the heat release dummy bump that is notelectrically connected with the semiconductor element or the signal bumpfor heat release, because the power wiring section 1003 a having a widerwidth is connected to the semiconductor element through the groundwiring section 1003 b, the power pad 1001 a and the ground pad 1001 band the bump for improving the dissipating performance may be located onthe outer peripheral portion of the semiconductor element. Additionally,of the bumps 1002 d added for improving the dissipating performance, thebump located on the outer peripheral portion of the semiconductordevice, in particular, around a corner portion of a roughly rectangularsemiconductor device is also effective in improving mechanicalreliability of the semiconductor device. In general, the semiconductordevice is mainly formed of silicon, while the mounting substrate ismainly formed of an organic material. The stress caused by thedifference of a thermal expansion coefficient therebetween is induced tothe bump located at a joint portion between the semiconductor device andthe mounting substrate, in particular, the bump at the corner. Thisstress causes the solder ordinarily used as the bump materials to becracked, thereby making the electric connection out of order. The bump1002 d for improving the dissipating performance, additionally providedin this embodiment, is located at the corner. Hence, it serves toimprove the dissipating performance and reinforce the device, whichoffers an advantage of improving the mechanical reliability of thesemiconductor device.

61. The present embodiment is presupposed to provide the semiconductordevice 1000 with one kind of power wiring sections and one kind ofground wiring sections. However, the current semiconductor device mayneed various kinds of power and ground wiring sections. In such a case,the present invention is effective. FIG. 12 shows the semiconductordevice having the power and the ground pads for the output buffer andthe power and the ground pads for the other purposes to which theinvention of the present application is applied. The semiconductordevice of this embodiment includes the power pad and the ground pad forthe output buffer, the power pad and the ground pad for the circuit, thepower wiring section 2003 a and the ground wiring section 2003 b for theoutput buffer, and the power wiring section 3003 a for the circuit,those wiring sections of which correspond to the former pads. In thiscase, the output buffer, that is, the data pin pad is located in theupper half of the figure. In correspondence, the power wiring section2003 a for the output buffer, the ground wiring section 2003 b for theoutput buffer, the power bump 1002 a, and the ground bump 1002 b, thelatter two of which are connected to the former two, are all located inthe upper half of the figure. On the other hand, the signal pin padsexcept the data pin, such as an address pad, are located in the lowerhalf of the figure. In correspondence, the power wiring section 3003 aand the ground wiring section 3003 b connected to the circuit except theoutput buffer through the pad and the power bump 1002 a and the groundbump 1002 b connected to these wiring sections are all located in thelower half of the figure. This location allows the data pin 2 connectedto the output buffer final stage 4 inside of the semiconductor element,the power pin 1 connected to the output buffer final stage 4, and theground pin 3 to be located closer to each other. Hence, the effectiveinductance along the flow of the transient current may be reduced. Theresulting semiconductor device may be operated at low noises and a fastspeed.

62.FIG. 13 is a plan view showing another embodiment of the presentinvention. The present embodiment overcomes the following problem of theembodiments shown in FIGS. 11 and 12. Though these foregoing embodimentsare composed to locate the power wiring section and the ground wiringsection on both sides of all the signal lines and reduce the effectiveinductance along the flow of the transient current, thereby making thefast operation at low noises possible, they are likely to increase thepads 1001, the bumps 1002 and the wiring sections 1003 of thesemiconductor device in number. This is the problem of these foregoingembodiments. In this embodiment, a sequence of the pads 1001 locatedroughly on the center of the semiconductor device 1000 is a repetitionof the basic patterns of the power pad 1001 a, the ground pad 1001 b andfour signal pads 1001 c. At least one of the wiring sections adjacent onthe right and the left of any signal line is formed as the power wiringsection 1003 a or the ground wiring section 1003 c. In this embodiment,only one of the power wiring section and the ground wiring section islocated adjacently on both sides of the signal line. Hence, as comparedwith the structure wherein both the power wiring section and the groundwiring section are located, the present embodiments allows the effectiveinductance along the flow of the transient current to be made somewhatlarger. However, since the pads, the wiring sections and the bumps maybe reduced in number, the area of the semiconductor device may bereduced. Hence, the resulting semiconductor device is small-sized andinexpensive. In addition, the bump 1002 that is not connected to the padby the wiring section 1003 is illustrated in FIG. 13. This bump is notelectrically connected to the inside of the semiconductor device.

63. In FIG. 13, a numeral 4000 denotes an opening for exposing a fuseportion on the semiconductor element. In general, the memory deviceincludes more memory cells formed on a silicon chip than the specifiedcapacitance so that those extra memory cells are all connected to thepads. At the stage of testing the memory device, the wiring sectionleading from the block containing the defective memory cell to the padis cut out by applying a laser beam for the purpose of obtaining thememory device of the specified capacitance. The area used for cuttingout the wiring section by the laser beam is called a fuse. Hence, in thecase of applying the semiconductor device of this embodiment into thememory device, the conductor for composing the wiring section has to beaverted from the fuse portion so that the wiring section on thesemiconductor element may be cut out by the laser beam. As an area forthis purpose, an opening 4000 for exposing the fuse portion on thesemiconductor element has to be located on the particularly large powerwiring section or ground wiring section. In addition, this area is notrequired to be a hole-like opening. If it may be geometrically designed,any structure in which the fuse area averts the conductors may be used.

64.FIG. 14 shows another embodiment of the semiconductor device which isstructured to reduce the increase of pins in number by the differentmethod from the foregoing embodiment, lessen the effective inductancealong the flow of the transient current, and be operative at a fastspeed and low noises. In the present embodiment, a specific area of thepad forming surface 2000 of the semiconductor device includes thecorresponding pads to data, clock, write-enable, and data-mask pins,which have a higher switching frequency and a larger transient currentcaused in the switching than the other signal pins. These pads arearranged in the sequence of the power pad 1001 a, the ground pad 1001 band two signal pads. On the other hand, the signal pins except thosespecific signal pins, such as an address, a clock enable, a columnaddress strobe and a low address strobe, have a lower switchingfrequency and a smaller transient current. Hence, for these signal pins,the number of the power pads and the ground pads is reduced. This makesit possible to reduce the effective inductance along the flow of thetransient current about the data wiring sections that are likely togenerate noises and block the faster speed and, about the overallsemiconductor device, reduce the number of the wiring sections, thebumps and the pads, thereby making the fast operation possible and theoverall device smaller in size and lower in cost.

65.FIG. 15 is a sectional view showing another embodiment of the presentinvention. The present embodiment is structured to makes the conductorlayer larger in area and tabular and use the conductor layer as theground wiring section or the power wiring section. The foregoingembodiments have been structured to use the conductor layer only on theforming portion 1004 of the bump formed of solder. In FIG. 15, theconductor of the bump forming portion is made larger in area and is usedas a ground layer 5003 having a different height from the semiconductorelement 1100 from the ordinary signal wiring section 1003 c, the powerwiring section 1003 a and the ground wiring section 1003 b. Of course,conversely, this conductor may be used as another power layer. In thisembodiment, the signal wiring section 1003 c and the power wiringsection 1003 a are formed on the first dielectric layer and the groundlayer is formed on the second dielectric layer. The ground layer 5003 ofthis embodiment includes a portion to be removed according to a processaccuracy around these pads and bumps so that the ground layer 5003 isnot electrically short-circuited with the power pad 1001 a, the signalpad 1001 c, the power bump 1002 a and the signal pad 1002 c. In thisembodiment, a gap 5004 for limiting the position and the size of thebump is formed around the bump of another ground layer 5003 formed usedfor the bump forming portion. In forming the bump, the bump ordinarilyformed of solder has excellent adherence to the conductor andwettability so that the solder may be freely flown and expanded, therebybeing deformed. This gap 5005 is used for preventing the deformation andthe shift of the bump. As shown in FIG. 16, it is preferable that thisgap 5005 is formed of plural arcs, because it keeps the form of the bumproughly circular and removes any corner portion where stress isconcentrated. In this embodiment, the gap 5005 is formed like acombination of four quarter arcs. A numeral 5006 denotes a hole forventing gas. In general, when forming a metallic film on the sensitivePIQ, the gas generated on the interface makes the adherence of theconductor worse. Hence, it is preferable that a plurality of vent holesare formed for preventing the adherence from being lower. In thisembodiment, it is essential to provide the removable portion 5005 of thesecond dielectric layer for connecting the second ground wiring sectionwith the ground pad. This is for connecting the second ground wiringsection with the ground pad.

66. As shown in FIG. 16 that is a plan view of the invention, accordingto the present embodiment, a main wiring surface of the semiconductordevice 1 may be formed of such a two-layered conductor as being used ina printed board. Therefore, as compared with the structure that thesignal wiring sections, the power wiring section and the ground wiringsection are formed of the conductor on one level, the two-layeredstructure makes it possible to easily reduce the effective inductancemore. Moreover, in this embodiment, the pad forming surface of thesemiconductor device may be covered with the ground layer 5004 with nosubstantial gap. The embodiment thus provides the semiconductor devicewhich is superior in lightproofness and does not suffer from malfunctioncaused by an infrared electromagnetic wave. Further, the wiring layercomposes the power wiring section and the conductor of the bump formingportion composes the ground layer. These compositions make it possibleto compose a path capacitor that is large in area, thus, capacitance. Asmentioned above, since the path capacitor has no substantialcapacitance, the path capacitor has an excellent frequencycharacteristic. It means that the semiconductor device provided withthis path capacitor may be operated at a fast speed and low noises.

67.FIG. 19 shows another embodiment of the present invention. Thisembodiment is an application of the present invention into thesemiconductor device provided with the so-called peripheral pads as isoften used in a microcomputer. By applying this invention, if thesemiconductor device is provided with the peripheral pad, the reductionof the inductance of the wiring system and the fast operation of thedevice are made possible.

68. Preferred embodiment of the present invention makes it possible toreduce the effective inductance along the flow of the transient currentcaused when the semiconductor device is in operation. Hence, the presentinvention provides the semiconductor device that is less noisy andoperable at a fast speed.

We claim:
 1. A semiconductor device comprising: a semiconductor elementhaving signal pads for inputting and outputting a signal, power pads forsupplying a power potential, and ground pads for supplying a groundpotential, all of which are formed on one main surface of saidsemiconductor element; grounds bumps for outside connection beingconnected with said signal pad by signal wiring sections, wherein atleast one of said power wiring section and said ground wiring section isadjacent said signal wiring section.